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Processes of plasma oxidation of metals and semiconductors consists in formation on their surface of oxidic layers when placing in oxygen plasma of samples. Samples can be isolated (plasma oxygenating or to be under the potential, positive concerning plasma (plasma anodizing.

The cathode 3 heats up at the expense of a transmission of incandescence current through it. Owing to a chegotermoemissiya of electrons from a surface of the cathode ionization of a gas-discharge interval that leads to undervoltage of Ud up to the size less than 100 V is facilitated

Ïëàçìåííûå îêñèäû êðåìíèÿ íåçàâèñèìî îò ñïîñîáà ïîëó÷åíèÿ ïðåäñòàâëÿþò ñîáîé ñòåõèîìåòðè÷åñêèé äèîêñèä êðåìíèÿ SiO Èõ ñòðóêòóðà ÿâëÿåòñÿ àìîðôíîé, à ñâîéñòâà ïðèáëèæàþòñÿ ê ïàðàìåòðàì ïëåíîê SiO2, ïîëó÷åííûõ ìåòîäîì òåðìè÷åñêîãî îêèñëåíèÿ êðåìíèÿ. Ïëàçìåííûå îêñèäû, áóäó÷è ñôîðìèðîâàííûìè ïðè ñóùåñòâåííî áîëåå íèçêèõ òåìïåðàòóðàõ, íå îáëàäàþò äåôåêòàìè óïàêîâêè, íå ñîçäàþò ìåõàíè÷åñêèõ íàïðÿæåíèé íà ãðàíèöàõ ðàçäåëà îêñèä - ïîäëîæêà è â ðÿäå ñëó÷àåâ èìåþò áîëåå ñîâåðøåííóþ ñòðóêòóðó ãðàíèöû. Òåðìè÷åñêèå ïëåíêè SiO2, ñôîðìèðîâàííûå ïðè áîëüøèõ ñêîðîñòÿõ îêèñëåíèÿ, ñîäåðæàò êëàñòåðû êðåìíèÿ ðàçìåðîì. 3 íì.  òî æå âðåìÿ ïëàçìåííûå îêñèäû, ñôîðìèðîâàííûå äàæå ïðè áîëåå âûñîêèõ ñêîðîñòÿõ, íå èìåþò ïîäîáííûõ äåôåêòîâ íà ãðàíèöå ðàçäåëà Si - SiO2, â íèõ íå íàáëþäàåòñÿ òàêæå ýôôåêò ïåðåðàñïðåäåëåíèÿ ïðèìåñè ïðè îêèñëåíèè.

 êà÷åñòâå õèìè÷åñêè àêòèâíîãî ãàçà èñïîëüçóþò ìîíîñèëàí è êèñëîðîä, à â êà÷åñòâå áóôåðíîãî ãàçà - àçîò (îáû÷íî ïüåäåñòàë è ïëàñòèíû ñîïðèêàñàþòñÿ è ðàçîãðåâàþòñÿ). Âíóòðè ïüåäåñòàëà èìååòñÿ ïîëîñòü, ïðåäíàçíà÷åííàÿ äëÿ ïðåäîòâðàùåíèÿ ðàññåÿíèÿ òåïëà âî âíåøíåå ïðîñòðàíñòâî è îáåñïå÷åíèÿ ðàâíîìåðíîñòè òåìïåðàòóðû íà ïüåäåñòàëå, ÷òî ïðèâîäèò ê óëó÷øåíèþ ðàâíîìåðíîñòè ïî òîëùèíå ïëåíêè. Îäíàêî, ïîñêîëüêó ïëàñòèíû íå ïëîòíî ïðèëåãàþò ê ïüåäåñòàëó, òåìïåðàòóðà èõ ïîâåðõíîñòè íåîäèíàêîâà è âîñïðîèçâîäèìîñòü ðåçóëüòàòîâ óõóäøàåòñÿ. Êðîìå òîãî, ïî ìåðå óâåëè÷åíèÿ äèàìåòðà ïëàñòèí èõ ÷èñëî â ñîñòàâå îäíîé ïàðòèè óìåíüøàåòñÿ, ÷òî ïðåïÿòñòâóåò îðãàíèçàöèè èõ ìàññîâîãî ïðîèçâîäñòâà è ÿâëÿåòñÿ ñóùåñòâåííûì íåäîñòàòêîì äàííîãî ìåòîäà.

 òåõíîëîãèè èíòåãðàëüíûõ ñõåì ïðèìåíÿþòñÿ ìåòàëëè÷åñêèå è äèýëåêòðè÷åñêèå ïëåíêè, èçãîòàâëèâàåìûå ðàçëè÷íûìè ìåòîäàìè. Îäíàêî, â ñâÿçè ñ äàëüíåéøåé ìèíèàòþðèçàöèåé ÑÁÈÑ è èñïîëüçîâàíèåì ðàçëè÷íûõ ïîëóïðîâîäíèêîâ â êà÷åñòâå ïîäëîæåê íåîáõîäèìî ðàçðàáîòàòü íîâûå ìåòîäû èçãîòîâëåíèÿ ïëåíîê ñ åùå ìåíüøåé òîëùèíîé, ïëîòíîñòüþ äåôåêòîâ è áîëüøåé îäíîðîäíîñòüþ. Òðåáóåòñÿ òàêæå ìàêñèìàëüíî óâåëè÷èòü ÷èñëî ïëàñòèí, êîòîðûå ìîãóò áûòü îáðàáîòàíû â åäèíèöó âðåìåíè (äëÿ ñíèæåíèÿ ñòîèìîñòè ïðîäóêöèè), ó÷åñòü âîçìîæíûå îòðèöàòåëüíûå ïîñëåäñòâèÿ õèìè÷åñêèõ ðåàêöèé ìåæäó ïëåíêîé è ïîäëîæêîé, ðàçîãðåâ ïëåíêè â ïðîöåññå ôîðìèðîâàíèÿ, à òàêæå âîçìîæíîñòü ïîâðåæäåíèé ïðè îáëó÷åíèè.

It is necessary to distinguish from the advantages causing use of this dielectric that SiO2 is "native" material for silicon, easily from it it turns out by oxidation, it is not dissolved in water, it is easily reproduced and controlled.